j. , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB857 description ? collector current: lc= -4a ? low collector saturation voltage :vce(?tr-1.0v(max)@lc=-2a ? high collector power dissipation ? complement to type 2sd1133 applications ? designed for low frequency power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation @ tc=25'c junction temperature storage temperature range value -70 -50 -5 -4 -8 40 150 -45-150 unit v v v a a w 'c ?c . ,-v 2 fim: 1 base ! 2 collector 3 emitter " 3 to-220c package *m a t _j_ -. b - ...... \j ,?| x- 3\^) c %> 4 h ' , 1 ? j k h c 4 p: oh dlh* a b c d f g h j k l 0 r s u m * mm m!n 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 -s ? , 4--j reserves the right to change test conditions, parameter limits arid package dimensions \\ithout irnishcd hy n,l semi-conductors is believed lo he both accurate and reliable at the time of going i semi-conductors assumes no responsibility lor any errors or omissions discovered in its use. encourages customers to \erilv lh:il d;il:ishi?ek aiv rimvni hi-i'mv nhrmu unli-i-y; n.i seiiii-conduetors rest notice. information rirnisl' lo press. i lo\\ever. n.i seini-i_onuuciors assumes no respoiisininty lor any errors or omissions iliscovi n.i semi-conductors encourages euslomers to verily thai datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB857 electrical characteristics tc-25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vbe(oh) icbo hpe-1 hpe-2 fi parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current dc current gain dc current gain current-gain?bandwidth product conditions lc= -30ma ; rbe= lc=-1ma; ie=0 ie= -1 ma ; ic- 0 lc= -2a; ib= -0.2a lc=-1a;vce=-4v vcb= -50v ; ie= 0 lc=-1a;vce=-4v ? lc=-0.1a;vce=-4v lc= -0.5a ; vce= -4v min -50 -70 -5 60 35 typ. 15 max -1.0 -1.0 -1 320 unit v v v v v ma mhz hpe-1 classifications b 60-120 c 100-200 d 160-320
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